Publications

Publications and Conference Presentations

  • Brandt, D. Gorelikov, A. Lehmann, N. Sullivan*, “Physics with and Physics of Atomic Layer Deposited Nanofilms,” 17th International Conference on Atomic Layer Deposition July 15-18, 2017, Denver, Colorado, USA

  • Chris Nixon, Brian Triggs, Neal Sullivan and Huazhi Li, “Total-Dose Radiation Response of Atomic Layer Deposition Al2O3 Films,” 17th International Conference on Atomic Layer Deposition July 15-18, 2017, Denver, Colorado, USA.

  • Huazhi Li*, Neal Sullivan, David R. Beaulieu, “Optimization of ALD Al2O3 for Surface Passivation of Solar Cell,” 16th International Conference on Atomic Layer Deposition, Dublin, Ireland, July 24-27, 2016.

  • H. Li1*, Mary Moore, N. Sullivan, J. Narayanamoorthy, “Low-Temperature Atomic Layer Deposition of Platinum Using (Methylcyclopentadienyl)trimethylplatinum and Ozone,” 15th International Conference on Atomic Layer Deposition, Portland, Oregon, USA, July 1-2, 2015

  • Huazhi Li*, Jayasri Narayanamoorthy, Neal Sullivan, Dmitry Gorelikov, “Low Temperature (LT) Thermal ALD Silicon Dioxides Using Ozone Process,” 14th International Conference on Atomic Layer Deposition, Kyoto, Japan, 15-18 June, 2014

  • J. Narayanamoorthy, D. Gorelikov, H. Li, N. Sullivan, “Large Area MCPs Coating by ALD,” AVS Topical Conference on Atomic Layer Deposition (ALD 2013), July 29-31, San Diego, CA

  • D. Gorelikov, H. Li*, J. Narayanamoorthy, N. Sullivan, “High Surface area / High Aspect Ratio ALD process optimization using AAO,” AVS Topical Conference on Atomic Layer Deposition (ALD 2013), July 29-31, San Diego, CA

  • D. Gorelikov*, N. Sullivan*, D. Gorelikov, P. de Rouffignac1, D.R. Beaulieu, K. Stenton, A.S. Tremsin, “Cryogenic single particle detection enabled by high aspect ratio ALD of functional nanofilms,” AVS Topical Conference on Atomic Layer Deposition (ALD 2013), July 29-31, San Diego, CA

  • S. Bachman, D. Beaulieu, P. de Rouffignac, D. Gorelikov, H. Klotzsch, K. Stenton, N. Sullivan, A. Tremsin, "Extreme surface area microchannel plate device fabricated with atomic layer deposition", The AVS Topical Conference on Atomic Layer Deposition (ALD 2012), June 17-20, Dresden, Gremany.

  • D.R. Beaulieu, D. Gorelikov, H. Klotzsch, J. Legere, J. Ryan, P. de Rouffignac, K. Saadatmand, K. Stenton, N. Sullivan, A.S. Tremsin, "Timing resolution of fast neutron and gamma counting with plastic microchannel plates", Nucl. Instr. Meth. A 659, pp. 394-398 (2011).

  • P. de Rouffignaca, N. Sullivana, D. Beaulieua, “Platinum Thin film properties in high aspect ratio structures and correlation to process conditions,” AVS Topical Conference on Atomic Layer Deposition (ALD 2011), June 26-29, Cambridge MA

  • D.R. Beaulieu, D. Gorelikov, H. Klotzsch, P. de Rouffignac, K. Saadatmand, K. Stenton, N. Sullivan, A.S. Tremsin, "Plastic microchannel plates with nano-engineered films", IWORID 2010 conference, Nucl. Instr. Meth. A 633, pp. S59-S61 (2011)

  • P. de Rouffignac, N. Sullivan, A. Tremsin, D. Gorelikov, D. Beaulieu, A. Hock, J. Heo, and R. G. Gordon, "Atomic Layer Deposition of Insulators and Conductors in Novel MEMS Devices", (Invited), AVS 10th International Conference on Atomic Layer Deposition, June 20-23, 2010, Seoul Education Culture Center, Seoul, Korea

  • D. Beaulieu, P. de Rouffignac, D. Gorelikov, K. Saadatmand, K. Stenton, N. Sullivan, A. Tremsin, “Engineered Nanofilms for improved MCP performance in Mass Spectrometry applications”, 58thAmerican Society for Mass Spectrometry (ASMS) Conference on Mass Spectrometry and Allied Topics, May 23 - 27, 2010, Salt Lake City, Utah

  • P. de Rouffignac, N. Sullivan, D. Beaulieu, J.-S. Park, A. Hock, R. G. Gordon, “Atomic Layer Deposition and Characterization of MgO from Magnesium Bis(Di-secbutylacetamidinate) and Water,” 9th International Conference on Atomic Layer Deposition, Monterey, California, USA, July 19-22, 2009

  • D. R. Beaulieu, D. Gorelikov, H. Klotzsch, P. de Rouffignac, K. Saadatmand, K. Stenton, N. Sullivan, A.S. Tremsin, "Novel Fast Neutron Counting Technology for Efficient Detection of Special Nuclear Materials", IEEE Nuclear Science Symposium, Orlando, FL, October 2009, Technologies for Homeland Security, 2009. HST '09. IEEE Conference, pp. 295-301, 10.1109/THS.2009.5168049 (2009).

  • N. Sullivan, D. Gorelikov, H. Klotzsch, P. de Rouffignac, K.Saadatmand, K. Stenton, D. R. Beaulieu, A. S. Tremsin, "Novel Fast Neutron Counting Technolgy for Efficient Detection of Special Nuclear Materials”, 2009 IEEE International Conference on Technologies for Homeland Security, HST 2009, Waltham MA, May 11 - 12, 2009.

  • N. Sullivan, P. de Rouffignac, D. Beaulieu, A. Tremsin, K. Saadatmand, D. Gorelikov, H. Klotzsch, K. Stenton, S. Bachman, R. Toomey, "Novel microchannel plate device fabricated with atomic layer deposition", 9th International Conference on Atomic Layer Deposition, Monterey CA, July 19-22, 2009.

  • D. R. Beaulieu, D. Gorelikov, P. de Rouffignac, K. Saadatmand, K. Stenton, N. Sullivan, A. S. Tremsin, “Nano-engineered Ultra High Gain Microchannel Plates”, International Workshop on Radiation Imaging Detectors in Helsinki, Finland, June 29 - July 3, 2008, Nucl. Instr. Meth. A 607, pp. 81-84 (2009).

  • A.S. Tremsin, H. F. Lockwood, D. R. Beaulieu, N. T. Sullivan, E. Munro, J. Rouse, "3D microscopic model of electron amplification in microchannel amplifiers for maskless lithography", 7th International Conference on Charged Particle Optics, Cambridge, England, July 2006, Physics Procedia 1 (2008) 565–572.

  • Gorelikov, D., Avidor, R., Sullivan, N., “CD-SEM-based Critical Shape Metrology of Integrated Circuits,” Proc. Arch Interface, (2003)

  • Sundaram, G., Mai, T., Sullivan, N., “Ultra-Low Voltage electron beam metrology of 157nm photoresist,” 4thInternational Symposium on 157nm Lithography, 2003

  • Bowdoin, S., Brandom, R., Mastovich, M. and Sullivan, N.T., “CD-SEM acquisition effects on 193 nm resist line slimming,” Proc SPIE, Vol. 5038, (2003)

  • Starikov, A. et al, “Applications of image diagnostics to metrology quality assurance and process control,” Proc SPIE, Vol. 5042, (2003)

  • Sullivan, N.T., Dixson, R., Bunday, B., Mastovich, M., Knutrud, P., Fabre, P., and Brandom, R., “Electron beam metrology of 193 nm resists at ultra-low voltage,” Proc SPIE Vol 5038, (2003)

  • Sullivan, N.T., Dixson, R., Bunday, B., Mastovich, M., Knutrud, P., Fabre, P., and Brandom, R., “Characterizing CD-SEM metrology of 193 nm resists at ultra-low voltage,” Proc. Arch Interface, (2002)

  • Sullivan, N. T., Mai, T., Bowdoin, S. and Vane, R., “A study of the effectiveness of the removal of hydrocarbon contamination by oxidative cleaning inside the SEM,” Proc. Microscopy and Microanalysis 2002.

  • Sullivan, N.T., “Fundamentals of Overlay Metrology,” Semiconductor International, Vol 24, No. 10, (September 2001), p73.

  • Ko, Y., Joy, D.C., Sullivan, N.T., “Secondary electron image profiles using bias voltage technique in deep contact hole,” Proceedings of Scanning in Scanning Vol. 23, 2, (2001).

  • Ko, Y., Joy, D.C., Sullivan, N.T., “Secondary electron image profiles using bias voltage technique in deep contact hole,” Proc. SPIE Vol. 4344, 37, (2001).

  • Fritze, M., Tyrrell, B., Astolfi, D.K., Davis, P., Wheeler, B., Cann, S., Chan, Rhyins, P., Sullivan, N., Brandom, R., Mastovich, M., “Investigation of full field CD control of sub-100nm SOI CMOS,” Proc. SPIE Vol. 4344, 334, (2001).

  • Askary, F., Sullivan, N.T., “Redefining critical in critical dimension metrology,” Proc. SPIE Vol. 4344, 815, (2001).

  • Fritze, M., P.W., Astolfi, D.K., Forte, T., Yost, D., Wyatt, P.W., Davis, P., Curtis, A., Preble, D., Cann, S., Denault, S., Chan, D.,Liu, H.Y., Shaw, J., Sullivan, N., Brandom, R., Mastovich, M, “Chromeless phase-shift masks used for sub-100 nm SOI CMOS transistors,” Solid State Technology, Vol 43, No. 7, (July 2000), p116.

  • Sullivan, N.T., “Critical issues in overlay metrology,” [Invited], Characterization and Metrology for ULSI Technology, AIP conf. Proc., 550, p346, (2000).

  • Ko, Y., Joy, D.C., Sullivan, N.T., “Secondary electron image profiles using bias voltage technique in deep contact hole,” Characterization and Metrology for ULSI Technology, AIP Conf. Proc., 550, p364, (2000).

  • Askary, F., Sullivan, N.T., “The importance of measurement accuracy in statistical process control,” Proc. SPIE Vol. 3998, 546, (2000).

  • Fritze, M., Burns, J.M., Wyatt, P.W., Astolfi, D.K., Forte, T., Yost, D., Davis, P., Curtis, A., Preble, D., Cann, S., Denault, S., Chan, D.,Liu, H.Y., Shaw, J., Sullivan, N., Brandom, R., Mastovich, M., “Application of chromeless phase-shift masks to sub-100 nm SOI CMOS transistor fabrication,” Proc. SPIE Vol. 4000, 388, (2000).

  • Fritze, M., Wyatt, P.W., Astolfi, D., Davis, P., Curtis, A., Preble, D., Cann, S., Denault, S., Chan, D., Shaw, J., Sullivan, N., Brandom, R., Mastovich, M., “Application of attenuated phase-shift masks to sub-0.18um logic patterns,” Proc. SPIE Vol. 4000, 1179, (2000).

  • Cresswell, M.W., Guillaume, N.M.P., Lee, W.E., Allen, R.A., Guthrie, W.F., Ghoshtagore, R.N., Osborne, Z.E., Sullivan, N., and Lindholm, L.W., “Extraction of sheet resistance from four-terminal sheet resistors replicated in monocrystalline films with non-planar geometries,” IEEE Transactions on Semiconductor Manufacturing, Vol 12, NO. 2, May 1999.

  • Krukar, R., Sullivan, N., Prins, S., McNeil, J., “In-Situ CD Measurement during Post Exposure Bake,” Presented at AVS 1998.

  • Sullivan, Neal T., “Overlay metrology; The systematic, the random and the ugly” [Invited], Characterization and Metrology for ULSI Technology, AIP Conf Proc, 449, p502 (1998).

  • Algair, J., Archie, C., Banke, B., Bogardus, H., Griffith, J., Marchman, H., Postek, M., Saraf, L., Schlesinger, J., Singh, B., Sullivan, N., Trimble, L., Vladar, A., “Towards a unified advanced CD-SEM specification for sub-0.18 m technology,” accepted for publication in Proc SPIE 1998.

  • Davidson, M., Sullivan, N., "An investigation into the effects of charging in SEM based CD metrology," Proc. SPIE Vol. 3050 (1997).

  • Erickson, D., Sullivan, N., Elliott, R., "Statistical verification of multiple CD SEM matching," Proc. SPIE Vol. 3050 (1997).

  • Davidson, M., Sullivan, N., "Charging effects caused by primary beam deflection in scanning electron microscopy based critical dimension metrology," Scanning Vol. 19, 3 (1997).

  • Laughlin, L., Nyyssonnen, D., Sullivan, N., "Metrology methods in photolithography," In: Handbook of microlithography, micromachining and microfabrication, Vol 1, Rai-Chordhury, P. editor, SPIE Press, Washington 475-597 (1997).

  • Dixson, R., Sullivan, N., Schneir, J., McWaid, T., Tsai, V.W., Prochazka, J., Young, M., "Measurement of a CD and Sidewall angle artifact with two dimensional CD AFM metrology," Proc. SPIE Vol. 2725, 572 (1996).

  • Dixson, R., Sullivan, N., Schneir, J., McWaid, J., Tsai, V.W., Zaidi, S.H., Brueck, S.R.J., "Toward accurate linewidth metrology using AFM and tip characterization," Proc. SPIE Vol. 2725, 589 (1996).

  • Sullivan, N., “Status and outlook for the AFM in advanced semiconductor process development and manufacturing,” [Invited], 2nd International Symposium on Noncontact Atomic Force Microscopy for Critical Dimension Metrology, October 1996.

  • Sullivan, N., Arsenault, A., "SEM review of unpatterned particle monitor wafers," Proc. SPIE Vol. 2439, 158 (1995).

  • Davidson, M.P., Sullivan, N., "Monte Carlo Simulation for CD SEM calibration and algorithm development," Proc. SPIE Vol. 2439, 334 (1995).

  • Lindsay, T., Sullivan, N., Dass, S., Pollard, G., Jones, B., "Comparison of state-of-the-art DUV lenses," Proc SPIE Vol. 2440, 678 (1995).

  • Schneir, J., McWaid, T., Dixson, R., Sullivan, N., "The use of reversal to improve AFM sidewall angle measurement accuracy," 42nd AVS Symposium (1995).

  • Dixson, R., Sullivan, N., Schneir, J., McWaid, T., Tsai, V.W., Zaidi, S.H., Brueck, S.R.J., "Dimensional Metrology with AFM," NISTIR 5752 (1995).

  • Sullivan, N., "Measuring Sidewall angles with the SXM" [Invited Presentation], 1st International Symposium on non-contact AFM for CD metrology, (1995).

  • Sullivan, N., "Current and future applications of in-line AFM for semiconductor wafer processing," Invited Paper], NISTIR 5752, 55 (1995).

  • Sullivan, N., Arsenault, S., "SEM/EDS Analysis method for bare silicon particle wafers," IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop, 293 (1994).

  • Sullivan, N., "Semiconductor pattern overlay," In: Handbook of Critical Dimension Metrology and Process Control, Monahan, K., Editor, SPIE Press, Washington, 160-189 (1994).

  • Sullivan, N., Newcomb, R.M., “Critical dimension metrology in the SEM: Comparison of backscattered vs. Secondary electron detection,” Proc. SPIE, Vol. 2196 (1994)

  • Fink, I., Sullivan, N., Lekas, J., “Overlay sample plan optimization for the detection of higher order contributions to misalignment,” Proc. SPIE Vol 2196 (1994)

  • Wang, L., Sullivan, N., Basque, B., Wright, W., “I.C. Component activation energy and applications,” 2nd International Digital Reliability Seminar, April 1990.

  • Sullivan, N., “Use of a wafer level, ramped voltage, stress test for gate oxide reliability improvement,” 3rd International Digital Reliability Seminar, September 1991.